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|Abstract:||Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize modulation doping, where the ionized dopants are physically separated from the 2DES channel. The doping-well structure augments modulation doping by providing additional screening for all types of charged impurities in the vicinity of the 2DES, which is necessary to achieve record-breaking samples. Despite its prevalence in the design of ultrahigh-mobility 2DESs, the working principles of the doping-well structure have not been reported. Here we elaborate on the mechanics of electron transfer from doping wells to the 2DES, focusing on GaAs/AlGaAs samples grown by molecular beam epitaxy. Based on this understanding we demonstrate how structural parameters in the doping well can be varied to tune the properties of the 2DES.|
|Citation:||Chung, YJ, Rosales, KAV, Baldwin, KW, West, KW, Shayegan, M, Pfeiffer, LN. (2020). Working principles of doping-well structures for high-mobility two-dimensional electron systems. Physical Review Materials, 4 (10.1103/PhysRevMaterials.4.044003|
|Type of Material:||Journal Article|
|Journal/Proceeding Title:||Physical Review Materials|
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