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Working principles of doping-well structures for high-mobility two-dimensional electron systems

Author(s): Chung, YJ; Rosales, KAV; Baldwin, KW; West, KW; Shayegan, Mansour; et al

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dc.contributor.authorChung, YJ-
dc.contributor.authorRosales, KAV-
dc.contributor.authorBaldwin, KW-
dc.contributor.authorWest, KW-
dc.contributor.authorShayegan, Mansour-
dc.contributor.authorPfeiffer, LN-
dc.date.accessioned2021-10-08T20:17:04Z-
dc.date.available2021-10-08T20:17:04Z-
dc.date.issued2020en_US
dc.identifier.citationChung, YJ, Rosales, KAV, Baldwin, KW, West, KW, Shayegan, M, Pfeiffer, LN. (2020). Working principles of doping-well structures for high-mobility two-dimensional electron systems. Physical Review Materials, 4 (10.1103/PhysRevMaterials.4.044003en_US
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1vg3w-
dc.description.abstractSuppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize modulation doping, where the ionized dopants are physically separated from the 2DES channel. The doping-well structure augments modulation doping by providing additional screening for all types of charged impurities in the vicinity of the 2DES, which is necessary to achieve record-breaking samples. Despite its prevalence in the design of ultrahigh-mobility 2DESs, the working principles of the doping-well structure have not been reported. Here we elaborate on the mechanics of electron transfer from doping wells to the 2DES, focusing on GaAs/AlGaAs samples grown by molecular beam epitaxy. Based on this understanding we demonstrate how structural parameters in the doping well can be varied to tune the properties of the 2DES.en_US
dc.language.isoen_USen_US
dc.relation.ispartofPhysical Review Materialsen_US
dc.rightsAuthor's manuscripten_US
dc.titleWorking principles of doping-well structures for high-mobility two-dimensional electron systemsen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1103/PhysRevMaterials.4.044003-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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