fractional quantum Hall effect in tilted magnetic fields
Author(s): Hasdemir, S; Liu, Yang; Deng, H; Shayegan, Mansour; Pfeiffer, LN; et al
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Abstract: | Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor ν=1/2 as we tilt the sample in the magnetic field. Starting with a compressible state at zero tilt angle, a strong ν=1/2 fractional quantum Hall state appears at intermediate angles. At higher angles an insulating phase surrounds this state and eventually engulfs it at the highest angles. This evolution occurs because the parallel component of the field renders the charge distribution increasingly bilayer-like. The evolution is qualitatively similar to the one seen, in the absence of parallel field, as a function of increasing the electron density in the quantum well, but there are some notable differences. |
Publication Date: | Jan-2015 |
Electronic Publication Date: | 14-Jan-2015 |
Citation: | Hasdemir, S, Liu, Yang, Deng, H, Shayegan, M, Pfeiffer, LN, West, KW, Baldwin, KW, Winkler, R. (2015). fractional quantum Hall effect in tilted magnetic fields. Physical Review B, 91 (4), 10.1103/PhysRevB.91.045113 |
DOI: | doi:10.1103/PhysRevB.91.045113 |
ISSN: | 1098-0121 |
EISSN: | 1550-235X |
Type of Material: | Journal Article |
Journal/Proceeding Title: | Physical Review B |
Version: | Author's manuscript |
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