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fractional quantum Hall effect in tilted magnetic fields

Author(s): Hasdemir, S; Liu, Yang; Deng, H; Shayegan, Mansour; Pfeiffer, LN; et al

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Abstract: Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor ν=1/2 as we tilt the sample in the magnetic field. Starting with a compressible state at zero tilt angle, a strong ν=1/2 fractional quantum Hall state appears at intermediate angles. At higher angles an insulating phase surrounds this state and eventually engulfs it at the highest angles. This evolution occurs because the parallel component of the field renders the charge distribution increasingly bilayer-like. The evolution is qualitatively similar to the one seen, in the absence of parallel field, as a function of increasing the electron density in the quantum well, but there are some notable differences.
Publication Date: Jan-2015
Electronic Publication Date: 14-Jan-2015
Citation: Hasdemir, S, Liu, Yang, Deng, H, Shayegan, M, Pfeiffer, LN, West, KW, Baldwin, KW, Winkler, R. (2015). fractional quantum Hall effect in tilted magnetic fields. Physical Review B, 91 (4), 10.1103/PhysRevB.91.045113
DOI: doi:10.1103/PhysRevB.91.045113
ISSN: 1098-0121
EISSN: 1550-235X
Type of Material: Journal Article
Journal/Proceeding Title: Physical Review B
Version: Author's manuscript

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