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fractional quantum Hall effect in tilted magnetic fields

Author(s): Hasdemir, S; Liu, Yang; Deng, H; Shayegan, Mansour; Pfeiffer, LN; et al

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dc.contributor.authorHasdemir, S-
dc.contributor.authorLiu, Yang-
dc.contributor.authorDeng, H-
dc.contributor.authorShayegan, Mansour-
dc.contributor.authorPfeiffer, LN-
dc.contributor.authorWest, KW-
dc.contributor.authorBaldwin, KW-
dc.contributor.authorWinkler, R-
dc.date.accessioned2021-10-08T20:17:28Z-
dc.date.available2021-10-08T20:17:28Z-
dc.date.issued2015-01en_US
dc.identifier.citationHasdemir, S, Liu, Yang, Deng, H, Shayegan, M, Pfeiffer, LN, West, KW, Baldwin, KW, Winkler, R. (2015). fractional quantum Hall effect in tilted magnetic fields. Physical Review B, 91 (4), 10.1103/PhysRevB.91.045113en_US
dc.identifier.issn1098-0121-
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1np2p-
dc.description.abstractMagnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor ν=1/2 as we tilt the sample in the magnetic field. Starting with a compressible state at zero tilt angle, a strong ν=1/2 fractional quantum Hall state appears at intermediate angles. At higher angles an insulating phase surrounds this state and eventually engulfs it at the highest angles. This evolution occurs because the parallel component of the field renders the charge distribution increasingly bilayer-like. The evolution is qualitatively similar to the one seen, in the absence of parallel field, as a function of increasing the electron density in the quantum well, but there are some notable differences.en_US
dc.language.isoen_USen_US
dc.relation.ispartofPhysical Review Ben_US
dc.rightsAuthor's manuscripten_US
dc.titlefractional quantum Hall effect in tilted magnetic fieldsen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1103/PhysRevB.91.045113-
dc.date.eissued2015-01-14en_US
dc.identifier.eissn1550-235X-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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