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Negative longitudinal magnetoresistance in gallium arsenide quantum wells

Author(s): Xu, J; Ma, MK; Sultanov, M; Xiao, Z-L; Wang, Y-L; et al

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Abstract: Negative longitudinal magnetoresistances (NLMRs) have been recently observed in a variety of topological materials and often considered to be associated with Weyl fermions that have a defined chirality. Here we report NLMRs in non-Weyl GaAs quantum wells. In the absence of a magnetic field the quantum wells show a transition from semiconducting-like to metallic behaviour with decreasing temperature. We observe pronounced NLMRs up to 9 Tesla at temperatures above the transition and weak NLMRs in low magnetic fields at temperatures close to the transition and below 5 K. The observed NLMRs show various types of magnetic field behaviour resembling those reported in topological materials. We attribute them to microscopic disorder and use a phenomenological three-resistor model to account for their various features. Our results showcase a contribution of microscopic disorder in the occurrence of unusual phenomena. They may stimulate further work on tuning electronic properties via disorder/defect nano-engineering.
Publication Date: 2019
Citation: Xu, J, Ma, MK, Sultanov, M, Xiao, Z-L, Wang, Y-L, Jin, D, Lyu, Y-Y, Zhang, W, Pfeiffer, LN, West, KW, Baldwin, KW, Shayegan, M, Kwok, W-K. (2019). Negative longitudinal magnetoresistance in gallium arsenide quantum wells. Nature Communications, 10 (10.1038/s41467-018-08199-2
DOI: doi:10.1038/s41467-018-08199-2
Type of Material: Journal Article
Journal/Proceeding Title: Nature Communications
Version: Final published version. This is an open access article.

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