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DC Field | Value | Language |
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dc.contributor.author | Xu, J | - |
dc.contributor.author | Ma, MK | - |
dc.contributor.author | Sultanov, M | - |
dc.contributor.author | Xiao, Z-L | - |
dc.contributor.author | Wang, Y-L | - |
dc.contributor.author | Jin, D | - |
dc.contributor.author | Lyu, Y-Y | - |
dc.contributor.author | Zhang, W | - |
dc.contributor.author | Pfeiffer, LN | - |
dc.contributor.author | West, KW | - |
dc.contributor.author | Baldwin, KW | - |
dc.contributor.author | Shayegan, Mansour | - |
dc.contributor.author | Kwok, W-K | - |
dc.date.accessioned | 2021-10-08T20:17:17Z | - |
dc.date.available | 2021-10-08T20:17:17Z | - |
dc.date.issued | 2019 | en_US |
dc.identifier.citation | Xu, J, Ma, MK, Sultanov, M, Xiao, Z-L, Wang, Y-L, Jin, D, Lyu, Y-Y, Zhang, W, Pfeiffer, LN, West, KW, Baldwin, KW, Shayegan, M, Kwok, W-K. (2019). Negative longitudinal magnetoresistance in gallium arsenide quantum wells. Nature Communications, 10 (10.1038/s41467-018-08199-2 | en_US |
dc.identifier.uri | http://arks.princeton.edu/ark:/88435/pr1h28z | - |
dc.description.abstract | Negative longitudinal magnetoresistances (NLMRs) have been recently observed in a variety of topological materials and often considered to be associated with Weyl fermions that have a defined chirality. Here we report NLMRs in non-Weyl GaAs quantum wells. In the absence of a magnetic field the quantum wells show a transition from semiconducting-like to metallic behaviour with decreasing temperature. We observe pronounced NLMRs up to 9 Tesla at temperatures above the transition and weak NLMRs in low magnetic fields at temperatures close to the transition and below 5 K. The observed NLMRs show various types of magnetic field behaviour resembling those reported in topological materials. We attribute them to microscopic disorder and use a phenomenological three-resistor model to account for their various features. Our results showcase a contribution of microscopic disorder in the occurrence of unusual phenomena. They may stimulate further work on tuning electronic properties via disorder/defect nano-engineering. | en_US |
dc.language.iso | en_US | en_US |
dc.relation.ispartof | Nature Communications | en_US |
dc.rights | Final published version. This is an open access article. | en_US |
dc.title | Negative longitudinal magnetoresistance in gallium arsenide quantum wells | en_US |
dc.type | Journal Article | en_US |
dc.identifier.doi | doi:10.1038/s41467-018-08199-2 | - |
pu.type.symplectic | http://www.symplectic.co.uk/publications/atom-terms/1.0/journal-article | en_US |
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File | Description | Size | Format | |
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Negative longitudinal magnetoresistance in gallium arsenide quantum wells.pdf | 1.65 MB | Adobe PDF | View/Download |
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