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Ultralow doping in organic semiconductors: Evidence of trap filling

Author(s): Olthof, S; Mehraeen, S; Mohapatra, SK; Barlow, S; Coropceanu, V; et al

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Abstract: Tail states in organic semiconductors have a significant influence on device performances by acting as traps in charge transport. We present a study of the controlled passivation of acceptor tail states in fullerene C60 by the addition of electrons introduced by molecular n doping. Using ultralow doping, we are able to successively fill the traps with charges and examine the changes in conductivity, activation energy, mobility, and Fermi-level position. Passivation of the traps leads to an increase of the electron mobility in C60 by more than 3 orders of magnitude, to reach 0.21 cm^2 / (V s).
Publication Date: 26-Oct-2012
Citation: Olthof, S, Mehraeen, S, Mohapatra, SK, Barlow, S, Coropceanu, V, Brédas, J-L, Marder, SR, Kahn, A. (2012). Ultralow doping in organic semiconductors: Evidence of trap filling. Physical Review Letters, 109 (10.1103/PhysRevLett.109.176601
DOI: doi:10.1103/PhysRevLett.109.176601
Type of Material: Journal Article
Journal/Proceeding Title: Physical Review Letters
Version: Author's manuscript

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