Ultralow doping in organic semiconductors: Evidence of trap filling

Abstract

Tail states in organic semiconductors have a significant influence on device performances by acting as traps in charge transport. We present a study of the controlled passivation of acceptor tail states in fullerene C60 by the addition of electrons introduced by molecular n doping. Using ultralow doping, we are able to successively fill the traps with charges and examine the changes in conductivity, activation energy, mobility, and Fermi-level position. Passivation of the traps leads to an increase of the electron mobility in C60 by more than 3 orders of magnitude, to reach 0.21 cm^2 / (V s).