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MSC-PoL: Hybrid GaN-Si Multistacked Switched Capacitor 48V PwrSiP VRM for Chiplets

Author(s): Wang, Ping; Chen, Yenan; Szczeszynski, Gregory; Allen, Stephen; Giuliano, David; et al

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dc.contributor.authorWang, Ping-
dc.contributor.authorChen, Yenan-
dc.contributor.authorSzczeszynski, Gregory-
dc.contributor.authorAllen, Stephen-
dc.contributor.authorGiuliano, David-
dc.contributor.authorChen, Minjie-
dc.date.accessioned2023-12-24T00:04:08Z-
dc.date.available2023-12-24T00:04:08Z-
dc.date.issued2023-02-23en_US
dc.identifier.citationWang, Ping, Chen, Yenan, Szczeszynski, Gregory, Allen, Stephen, Giuliano, David, Chen, Minjie. (MSC-PoL: Hybrid GaN-Si Multistacked Switched Capacitor 48V PwrSiP VRM for Chiplets. 10.36227/techrxiv.22132694.v1en_US
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1cr5nc4t-
dc.description.abstractThis paper presents a multistack switched-capacitor point-of-load (MSC-PoL) voltage regulation module (VRM) with coupled magnetics for ultrahigh-current chiplet systems. In the MSC-PoL architecture, the stacked switched-capacitor cells split the high input voltage into several intermediate voltage rails, which are loaded with the switched-inductor cells to achieve soft charging and voltage regulation. Automatic capacitor voltage balancing and inductor current sharing are realized during the soft charging process. Many inductors of the switched-inductor cells are coupled into one and operated in interleaving to reduce the inductor current ripple and boost the transient speed. A 48-to-1-V/450-A VRM containing two MSC-PoL modules is built and tested, leveraging high voltage GaN devices for the frontend and high current Silicon devices for the back-end. Two ladder-structured coupled inductor designs are developed and compared, one of which installs a leakage magnetic plate to adjust the leakage inductance for lower current ripple. Featuring 3D stacked packaging, the entire power stage, gate drivers, and bootstrap circuits of one MSC-PoL module are enclosed into a 1/16-brick/0.31-in3/6-mm-thick package. The peak and the fullload efficiencies as well as the full-load power density (including both gate loss and size) of the MSC-PoL prototype with and without using the leakage plate are 91.7% and 89.5%, 85.8% and 85.6%, and 621 W/in3 and 724 W/in3, respectively. The 6-mm-thick MSC-PoL converter can be embedded into the chiplet or CPU socket, enabling power-supply-in-package (PwrSiP) for extreme efficiency, density, and control bandwidth.en_US
dc.language.isoen_USen_US
dc.relation.ispartofIEEE Transactions on Power Electronicsen_US
dc.rightsAuthor's manuscripten_US
dc.titleMSC-PoL: Hybrid GaN-Si Multistacked Switched Capacitor 48V PwrSiP VRM for Chipletsen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.36227/techrxiv.22132694.v1-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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