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Stark shift and field ionization of arsenic donors in 28Si- silicon-on-insulator structures

Author(s): Lo, CC; Simmons, S; Lo Nardo, R; Weis, CD; Tyryshkin, AM; et al

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Abstract: We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified 28Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to 2 V/μm to be applied across the SOI layer. Utilizing this structure, we measure the Stark shift parameters of arsenic donors embedded in the 28Si-SOI layer and find a contact hyperfine Stark parameter of ηa =-1.9 ± 0.7 × 10-3μm2/V2. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.
Publication Date: 12-May-2014
Electronic Publication Date: 12-May-2014
Citation: Lo, CC, Simmons, S, Lo Nardo, R, Weis, CD, Tyryshkin, AM, Meijer, J, Rogalla, D, Lyon, SA, Bokor, J, Schenkel, T, Morton, JJL. (2014). Stark shift and field ionization of arsenic donors in 28Si- silicon-on-insulator structures. Applied Physics Letters, 104 (10.1063/1.4876175
DOI: doi:10.1063/1.4876175
Type of Material: Journal Article
Journal/Proceeding Title: Applied Physics Letters
Version: Author's manuscript



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