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Stark shift and field ionization of arsenic donors in 28Si- silicon-on-insulator structures

Author(s): Lo, CC; Simmons, S; Lo Nardo, R; Weis, CD; Tyryshkin, AM; et al

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dc.contributor.authorLo, CC-
dc.contributor.authorSimmons, S-
dc.contributor.authorLo Nardo, R-
dc.contributor.authorWeis, CD-
dc.contributor.authorTyryshkin, AM-
dc.contributor.authorMeijer, J-
dc.contributor.authorRogalla, D-
dc.contributor.authorLyon, Stephen A-
dc.contributor.authorBokor, J-
dc.contributor.authorSchenkel, T-
dc.contributor.authorMorton, JJL-
dc.date.accessioned2021-10-08T20:15:53Z-
dc.date.available2021-10-08T20:15:53Z-
dc.date.issued2014-5-12en_US
dc.identifier.citationLo, CC, Simmons, S, Lo Nardo, R, Weis, CD, Tyryshkin, AM, Meijer, J, Rogalla, D, Lyon, SA, Bokor, J, Schenkel, T, Morton, JJL. (2014). Stark shift and field ionization of arsenic donors in 28Si- silicon-on-insulator structures. Applied Physics Letters, 104 (10.1063/1.4876175en_US
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1985x-
dc.description.abstractWe develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified 28Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to 2 V/μm to be applied across the SOI layer. Utilizing this structure, we measure the Stark shift parameters of arsenic donors embedded in the 28Si-SOI layer and find a contact hyperfine Stark parameter of ηa =-1.9 ± 0.7 × 10-3μm2/V2. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.en_US
dc.language.isoen_USen_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsAuthor's manuscripten_US
dc.titleStark shift and field ionization of arsenic donors in 28Si- silicon-on-insulator structuresen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1063/1.4876175-
dc.date.eissued2014-5-12en_US
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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