Skip to main content

Observation of fractional quantum Hall effect in an InAs quantum well

Author(s): Ma, MK; Hossain, MS; Villegas Rosales, KA; Deng, H; Tschirky, T; et al

To refer to this page use:
Abstract: The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasiparticles with non-Abelian statistics such as Majorana fermions and parafermions. To attain its full promise, however, the electron system has to be clean enough to exhibit electron-electron interaction phenomena. Here, we report the observation of the fractional quantum Hall effect in a very low disorder InAs quantum well with a well width of 24 nm, containing a two-dimensional electron system with a density n=7.8×1011cm-2 and low-temperature mobility 1.8×106cm2/Vs. At a temperature of ≃35 mK and B≃24 T, we observe a deep minimum in the longitudinal resistance, accompanied by a nearly quantized Hall plateau at a Landau level filling factor ν=4/3.
Publication Date: 2017
Citation: Ma, MK, Hossain, MS, Villegas Rosales, KA, Deng, H, Tschirky, T, Wegscheider, W, Shayegan, M. (2017). Observation of fractional quantum Hall effect in an InAs quantum well. Physical Review B, 96 (10.1103/PhysRevB.96.241301
DOI: doi:10.1103/PhysRevB.96.241301
Type of Material: Journal Article
Journal/Proceeding Title: Physical Review B
Version: Author's manuscript

Items in OAR@Princeton are protected by copyright, with all rights reserved, unless otherwise indicated.