# Observation of fractional quantum Hall effect in an InAs quantum well

## Author(s): Ma, MK; Hossain, MS; Villegas Rosales, KA; Deng, H; Tschirky, T; et al

To refer to this page use: http://arks.princeton.edu/ark:/88435/pr17k3t
DC FieldValueLanguage
dc.contributor.authorMa, MK-
dc.contributor.authorHossain, MS-
dc.contributor.authorVillegas Rosales, KA-
dc.contributor.authorDeng, H-
dc.contributor.authorTschirky, T-
dc.contributor.authorWegscheider, W-
dc.contributor.authorShayegan, Mansour-
dc.date.accessioned2021-10-08T20:17:18Z-
dc.date.available2021-10-08T20:17:18Z-
dc.date.issued2017en_US
dc.identifier.citationMa, MK, Hossain, MS, Villegas Rosales, KA, Deng, H, Tschirky, T, Wegscheider, W, Shayegan, M. (2017). Observation of fractional quantum Hall effect in an InAs quantum well. Physical Review B, 96 (10.1103/PhysRevB.96.241301en_US
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr17k3t-
dc.description.abstractThe two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasiparticles with non-Abelian statistics such as Majorana fermions and parafermions. To attain its full promise, however, the electron system has to be clean enough to exhibit electron-electron interaction phenomena. Here, we report the observation of the fractional quantum Hall effect in a very low disorder InAs quantum well with a well width of 24 nm, containing a two-dimensional electron system with a density n=7.8×1011cm-2 and low-temperature mobility 1.8×106cm2/Vs. At a temperature of ≃35 mK and B≃24 T, we observe a deep minimum in the longitudinal resistance, accompanied by a nearly quantized Hall plateau at a Landau level filling factor ν=4/3.en_US
dc.language.isoen_USen_US
dc.relation.ispartofPhysical Review Ben_US
dc.rightsAuthor's manuscripten_US
dc.titleObservation of fractional quantum Hall effect in an InAs quantum wellen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1103/PhysRevB.96.241301-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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