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# Spin relaxation and donor-acceptor recombination of Se+ in 28-silicon

## Author(s): Lo Nardo, R; Wolfowicz, G; Simmons, S; Tyryshkin, AM; Riemann, H; et al

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 Abstract: Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly ionized selenium donor (Se+) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation (T1) and coherence (T2) times of Se+ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above ∼15K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se0. Publication Date: 7-Oct-2015 Electronic Publication Date: 7-Oct-2015 Citation: Lo Nardo, R, Wolfowicz, G, Simmons, S, Tyryshkin, AM, Riemann, H, Abrosimov, NV, Becker, P, Pohl, H-J, Steger, M, Lyon, SA, Thewalt, MLW, Morton, JJL. (2015). Spin relaxation and donor-acceptor recombination of Se+ in 28-silicon. Physical Review B - Condensed Matter and Materials Physics, 92 (10.1103/PhysRevB.92.165201 DOI: doi:10.1103/PhysRevB.92.165201 Type of Material: Journal Article Journal/Proceeding Title: Physical Review B - Condensed Matter and Materials Physics Version: Author's manuscript

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