To refer to this page use:
|Abstract:||Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly ionized selenium donor (Se+) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation (T1) and coherence (T2) times of Se+ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above ∼15K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se0.|
|Electronic Publication Date:||7-Oct-2015|
|Citation:||Lo Nardo, R, Wolfowicz, G, Simmons, S, Tyryshkin, AM, Riemann, H, Abrosimov, NV, Becker, P, Pohl, H-J, Steger, M, Lyon, SA, Thewalt, MLW, Morton, JJL. (2015). Spin relaxation and donor-acceptor recombination of Se+ in 28-silicon. Physical Review B - Condensed Matter and Materials Physics, 92 (10.1103/PhysRevB.92.165201|
|Type of Material:||Journal Article|
|Journal/Proceeding Title:||Physical Review B - Condensed Matter and Materials Physics|
Items in OAR@Princeton are protected by copyright, with all rights reserved, unless otherwise indicated.