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Fractional Quantum Hall Effect at in Hole Systems Confined to GaAs Quantum Wells

Author(s): Liu, Yang; Graninger, AL; Hasdemir, S; Shayegan, Mansour; Pfeiffer, LN; et al

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Abstract: We observe the fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor ν=1/2 in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayerlike charge distributions. The ν=1/2 FQHE is stable when the charge distribution is symmetric and only in a range of intermediate densities, qualitatively similar to what is seen in two-dimensional electron systems confined to approximately twice wider GaAs quantum wells. Despite the complexity of the hole Landau level structure, originating from the coexistence and mixing of the heavy- and light-hole states, we find the hole ν=1/2 FQHE to be consistent with a two-component, Halperin-Laughlin (Ψ331) state.
Publication Date: Jan-2014
Electronic Publication Date: 29-Jan-2014
Citation: Liu, Yang, Graninger, AL, Hasdemir, S, Shayegan, M, Pfeiffer, LN, West, KW, Baldwin, KW, Winkler, R. (2014). Fractional Quantum Hall Effect at in Hole Systems Confined to GaAs Quantum Wells. Physical Review Letters, 112 (4), 10.1103/PhysRevLett.112.046804
DOI: doi:10.1103/PhysRevLett.112.046804
ISSN: 0031-9007
EISSN: 1079-7114
Type of Material: Journal Article
Journal/Proceeding Title: Physical Review Letters
Version: Author's manuscript

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