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Erbium-implanted materials for quantum communication applications

Author(s): Stevenson, Paul; Phenicie, Christopher M; Gray, Isaiah; Horvath, Sebastian P; Welinski, Sacha; et al

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dc.contributor.authorStevenson, Paul-
dc.contributor.authorPhenicie, Christopher M-
dc.contributor.authorGray, Isaiah-
dc.contributor.authorHorvath, Sebastian P-
dc.contributor.authorWelinski, Sacha-
dc.contributor.authorFerrenti, Austin M-
dc.contributor.authorFerrier, Alban-
dc.contributor.authorGoldner, Philippe-
dc.contributor.authorDas, Sujit-
dc.contributor.authorRamesh, Ramamoorthy-
dc.contributor.authorCava, Robert J-
dc.contributor.authorde Leon, Nathalie P-
dc.contributor.authorThompson, Jeff D-
dc.identifier.citationStevenson, Paul, Phenicie, Christopher M, Gray, Isaiah, Horvath, Sebastian P, Welinski, Sacha, Ferrenti, Austin M, Ferrier, Alban, Goldner, Philippe, Das, Sujit, Ramesh, Ramamoorthy, Cava, Robert J, de Leon, Nathalie P, Thompson, Jeff D. (Erbium-implanted materials for quantum communication applications. Physical Review B, 105 (22), 10.1103/physrevb.105.224106en_US
dc.description.abstractErbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C-band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er3+ ions are limited by currently available host materials, motivating the development of new Er3+-containing materials. Here, we demonstrate the use of ion implantation to efficiently screen prospective host candidates, and show that disorder introduced by ion implantation can be mitigated through post-implantation thermal processing to achieve inhomogeneous linewidths comparable to bulk linewidths in as-grown samples. We present optical spectroscopy data for each host material, which allows us to determine the level structure of each site, allowing us to compare the environments of Er3+ introduced via implantation and via doping during growth. We demonstrate that implantation can generate a range of local environments for Er3+, including those observed in bulk-doped materials, and that the populations of these sites can be controlled with thermal processing.en_US
dc.relation.ispartofPhysical Review Ben_US
dc.rightsAuthor's manuscripten_US
dc.titleErbium-implanted materials for quantum communication applicationsen_US
dc.typeJournal Articleen_US

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