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Anisotropic stark effect and electric-field noise suppression for phosphorus donor qubits in silicon

Author(s): Sigillito, AJ; Tyryshkin, AM; Lyon, Stephen A

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dc.contributor.authorSigillito, AJ-
dc.contributor.authorTyryshkin, AM-
dc.contributor.authorLyon, Stephen A-
dc.date.accessioned2021-10-08T20:15:52Z-
dc.date.available2021-10-08T20:15:52Z-
dc.date.issued2015-5-27en_US
dc.identifier.citationSigillito, AJ, Tyryshkin, AM, Lyon, SA. (2015). Anisotropic stark effect and electric-field noise suppression for phosphorus donor qubits in silicon. Physical Review Letters, 114 (10.1103/PhysRevLett.114.217601en_US
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1jr99-
dc.description.abstractWe report the use of novel, capacitively terminated coplanar waveguide resonators to measure the quadratic Stark shift of phosphorus donor qubits in Si. We confirm that valley repopulation leads to an anisotropic spin-orbit Stark shift depending on electric and magnetic field orientations relative to the Si crystal. By measuring the linear Stark effect, we estimate the effective electric field due to strain in our samples. We show that in the presence of this strain, electric-field sources of decoherence can be non-negligible. Using our measured values for the Stark shift, we predict magnetic fields for which the spin-orbit Stark effect cancels the hyperfine Stark effect, suppressing decoherence from electric-field noise. We discuss the limitations of these noise-suppression points due to random distributions of strain and propose a method for overcoming them.en_US
dc.language.isoen_USen_US
dc.relation.ispartofPhysical Review Lettersen_US
dc.rightsAuthor's manuscripten_US
dc.titleAnisotropic stark effect and electric-field noise suppression for phosphorus donor qubits in siliconen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1103/PhysRevLett.114.217601-
dc.date.eissued2015-3-8en_US
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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