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|Abstract:||We report on the electronic structure of freshly evaporated and air-exposed Molybdenum tri-oxide (MoO3) and the energy-level alignment between this compound and a holetransport material [e.g., N,N'-diphenyl-N,N'-bis (1-naphthyl)-1,1'-biphenyl-4,4'-diamine (a-NPD)]. Ultraviolet and inverse photoelectron spectroscopy show that freshly evaporated MoO3 exhibits deep-lying electronic states with an electron affinity (EA) of 6.7 eV and ionization energy (IE) of 9.7 eV. Air exposure reduces EA and IE by ∼1 eV, to 5.5 and 8.6 eV, respectively, but does not affect the hole-injection efficiency, which is confirmed by device studies. Thus, MoO3 can be applied in low-vacuum environment, which is particularly important for low-cost manufacturing processes. Our findings of the energy-level alignment between MoO3 and α-NPD also leads to a revised interpretation of the charge-injectionmechanism, whereby the hole-injection corresponds to an electron extraction from the organic highest-occupied molecular orbital (HOMO) level via the MoO3 conduction band.|
|Electronic Publication Date:||1-Jan-2011|
|Citation:||Meyer, J, Kahn, A. (2011). Electronic structure of molybdenum-oxide films and associated charge injection mechanisms in organic devices. Journal of Photonics for Energy, 1 (10.1117/1.3555081|
|Type of Material:||Journal Article|
|Journal/Proceeding Title:||Journal of Photonics for Energy|
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