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Chemically gated electronic structure of a superconducting doped topological insulator system

Author(s): Wray, Lewis Andrew; Xu, Suyang; Neupane, Madhab; Fedorov, A.V.; Hor, Yew San; et al

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Abstract: Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator CuxBi2Se3 as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices. © Published under licence by IOP Publishing Ltd.
Publication Date: 17-Jul-2013
Electronic Publication Date: 17-Jul-2013
Citation: Wray, L.A., Xu, S., Neupane, M., Fedorov, A.V., Hor, Y.S., Cava, R.J., Hasan, M.Z. (2013). Chemically gated electronic structure of a superconducting doped topological insulator system. Journal of Physics: Conference Series, 449 (012037 - 012037. doi:10.1088/1742-6596/449/1/012037
DOI: doi:10.1088/1742-6596/449/1/012037
EISSN: 1742-6596
Pages: 449.1:012037-1 - 012037-6
Type of Material: Journal Article
Journal/Proceeding Title: Journal of Physics: Conference Series
Version: Final published version. This is an open access article.
Notes: Journal of Physics: Conference Series. Volume 449, Issue 1, 2013, Article number 012037. 10th International Conference on Materials and Mechanisms of Superconductivity, M2S 2012; Washington, DC; United States; 29 July 2012 through 3 August 2012; Code 98822.

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