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Chemically gated electronic structure of a superconducting doped topological insulator system

Author(s): Wray, Lewis Andrew; Xu, Suyang; Neupane, Madhab; Fedorov, A.V.; Hor, Yew San; et al

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DC FieldValueLanguage
dc.contributor.authorWray, Lewis Andrew-
dc.contributor.authorXu, Suyang-
dc.contributor.authorNeupane, Madhab-
dc.contributor.authorFedorov, A.V.-
dc.contributor.authorHor, Yew San-
dc.contributor.authorCava, Robert Joseph-
dc.contributor.authorHasan, M. Zahid-
dc.date.accessioned2019-08-29T17:06:51Z-
dc.date.available2019-08-29T17:06:51Z-
dc.date.issued2013-07-17en_US
dc.identifier.citationWray, L.A., Xu, S., Neupane, M., Fedorov, A.V., Hor, Y.S., Cava, R.J., Hasan, M.Z. (2013). Chemically gated electronic structure of a superconducting doped topological insulator system. Journal of Physics: Conference Series, 449 (012037 - 012037. doi:10.1088/1742-6596/449/1/012037en_US
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1hx6m-
dc.descriptionJournal of Physics: Conference Series. Volume 449, Issue 1, 2013, Article number 012037. 10th International Conference on Materials and Mechanisms of Superconductivity, M2S 2012; Washington, DC; United States; 29 July 2012 through 3 August 2012; Code 98822.en_US
dc.description.abstractAngle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator CuxBi2Se3 as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices. © Published under licence by IOP Publishing Ltd.en_US
dc.format.extent449.1:012037-1 - 012037-6en_US
dc.language.isoen_USen_US
dc.relation.ispartofJournal of Physics: Conference Seriesen_US
dc.rightsFinal published version. This is an open access article.en_US
dc.titleChemically gated electronic structure of a superconducting doped topological insulator systemen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1088/1742-6596/449/1/012037-
dc.date.eissued2013-07-17en_US
dc.identifier.eissn1742-6596-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/conference-proceedingen_US

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