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|Abstract:||We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO 2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO 2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO 2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO 2 interface quality at low electron densities, where conventional mobility measurements are not possible.|
|Electronic Publication Date:||9-Jan-2012|
|Citation:||Jock, RM, Shankar, S, Tyryshkin, AM, He, J, Eng, K, Childs, KD, Tracy, LA, Lilly, MP, Carroll, MS, Lyon, SA. (2012). Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance. Applied Physics Letters, 100 (10.1063/1.3675862|
|Type of Material:||Journal Article|
|Journal/Proceeding Title:||Applied Physics Letters|
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