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Spatial distribution of electrons on a superfluid helium charge-coupled device

Author(s): Takita, M; Bradbury, FR; Gurrieri, TM; Wilkel, KJ; Eng, K; et al

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dc.contributor.authorTakita, M-
dc.contributor.authorBradbury, FR-
dc.contributor.authorGurrieri, TM-
dc.contributor.authorWilkel, KJ-
dc.contributor.authorEng, K-
dc.contributor.authorCarroll, MS-
dc.contributor.authorLyon, Stephen A-
dc.date.accessioned2021-10-08T20:15:56Z-
dc.date.available2021-10-08T20:15:56Z-
dc.date.issued2012en_US
dc.identifier.citationTakita, M, Bradbury, FR, Gurrieri, TM, Wilkel, KJ, Eng, K, Carroll, MS, Lyon, SA. (2012). Spatial distribution of electrons on a superfluid helium charge-coupled device. 400 (10.1088/1742-6596/400/4/042059en_US
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1d28x-
dc.description.abstractElectrons floating on the surface of superfluid helium have been suggested as promising mobile spin qubits. Three micron wide channels fabricated with standard silicon processing are filled with superfluid helium by capillary action. Photoemitted electrons are held by voltages applied to underlying gates. The gates are connected as a 3-phase charge-coupled device (CCD). Starting with approximately one electron per channel, no detectable transfer errors occur while clocking 109 pixels. One channel with its associated gates is perpendicular to the other 120, providing a CCD which can transfer electrons between the others. This perpendicular channel has not only shown efficient electron transport but also serves as a way to measure the uniformity of the electron occupancy in the 120 parallel channels.en_US
dc.language.isoen_USen_US
dc.relation.ispartofJournal of Physics: Conference Seriesen_US
dc.relation.ispartofseries26th International Conference on Low Temperature Physics, LT 2011; Beijing; China; 10 August 2011 through 17 August 2011;-
dc.rightsAuthor's manuscripten_US
dc.titleSpatial distribution of electrons on a superfluid helium charge-coupled deviceen_US
dc.typeConference Articleen_US
dc.identifier.doidoi:10.1088/1742-6596/400/4/042059-
dc.date.eissued2012en_US
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/conference-proceedingen_US

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