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Anisotropic Fermi contour of (001) GaAs electrons in parallel magnetic fields

Author(s): Kamburov, D; Mueed, MA; Shayegan, Mansour; Pfeiffer, LN; West, KW; et al

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Abstract: We demonstrate a severe Fermi contour anisotropy induced by the application of a parallel magnetic field to high-mobility electrons confined to a 30-nm-wide (001) GaAs quantum well. We study commensurability oscillations, namely, geometrical resonances of the electron orbits with a unidirectional, surface-strain-induced, periodic potential modulation, to directly probe the size of the Fermi contours along and perpendicular to the parallel field. Their areas are obtained from the Shubnikov-de Haas oscillations. Our experimental data agree semiquantitatively with the results of parameter-free calculations of the Fermi contours, but there are significant discrepancies.
Publication Date: Sep-2013
Electronic Publication Date: 30-Sep-2013
Citation: Kamburov, D, Mueed, MA, Shayegan, M, Pfeiffer, LN, West, KW, Baldwin, KW, Lee, JJD, Winkler, R. (2013). Anisotropic Fermi contour of (001) GaAs electrons in parallel magnetic fields. Physical Review B, 88 (12), 10.1103/PhysRevB.88.125435
DOI: doi:10.1103/PhysRevB.88.125435
ISSN: 1098-0121
EISSN: 1550-235X
Type of Material: Journal Article
Journal/Proceeding Title: Physical Review B
Version: Author's manuscript

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