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Neutral Silicon-Vacancy Centers in Diamond via Photoactivated Itinerant Carriers

Author(s): Zhang, Zi-Huai; Edmonds, Andrew M; Palmer, Nicola; Markham, Matthew L; de Leon, Nathalie P

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Abstract: Neutral silicon-vacancy (Si-V0) centers in diamond are promising candidates for quantum network applications because of their exceptional optical properties and spin coherence. However, the stabilization of Si-V0 centers requires careful Fermi-level engineering of the diamond host material, making further technological development challenging. Here, we show that Si-V0 centers can be efficiently stabilized by photoactivated itinerant carriers. Even in this nonequilibrium configuration, the resulting Si-V0 centers are stable enough to allow for resonant optical excitation and optically detected magnetic resonance. Our results pave the way for on-demand generation of Si-V0 centers as well as other emerging quantum defects in diamond.
Publication Date: 7-Mar-2023
Citation: Zhang, Zi-Huai, Edmonds, Andrew M, Palmer, Nicola, Markham, Matthew L, de Leon, Nathalie P. (2023). Neutral Silicon-Vacancy Centers in Diamond via Photoactivated Itinerant Carriers. Phys. Rev. Appl., 19 (3), 034022 - 034022. doi:10.1103/PhysRevApplied.19.034022
DOI: doi:10.1103/PhysRevApplied.19.034022
Type of Material: Journal Article
Journal/Proceeding Title: Physical Review Applied
Version: Author's manuscript

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