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NiN-Passivated NiO Hole-Transport Layer Improves Halide Perovskite-Based Solar Cell

Author(s): Itzhak, Anat; He, Xu; Kama, Adi; Kumar, Sujit; Ejgenberg, Michal; et al

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Abstract: The interfaces between inorganic selective contacts and halide perovskites (HaPs) are possibly the greatest challenge for making stable and reproducible solar cells with these materials. NiOx, an attractive hole-transport layer as it fits the electronic structure of HaPs, is highly stable and can be produced at a low cost. Furthermore, NiOx can be fabricated via scalable and controlled physical deposition methods such as RF sputtering to facilitate the quest for scalable, solvent-free, vacuum-deposited HaP-based solar cells (PSCs). However, the interface between NiOx and HaPs is still not well-controlled, which leads at times to a lack of stability and Voc losses. Here, we use RF sputtering to fabricate NiOx and then cover it with a NiyN layer without breaking vacuum. The NiyN layer protects NiOx doubly during PSC production. Firstly, the NiyN layer protects NiOx from Ni3+ species being reduced to Ni2+ by Ar plasma, thus maintaining NiOx conductivity. Secondly, it passivates the interface between NiOx and the HaPs, retaining PSC stability over time. This double effect improves PSC efficiency from an average of 16.5% with a 17.4% record cell to a 19% average with a 19.8% record cell and increases the device stability.
Publication Date: 13-Oct-2022
Citation: Itzhak, Anat, He, Xu, Kama, Adi, Kumar, Sujit, Ejgenberg, Michal, Kahn, Antoine, Cahen, David. (2022). NiN-Passivated NiO Hole-Transport Layer Improves Halide Perovskite-Based Solar Cell. ACS Applied Materials & Interfaces, 14 (42), 47587 - 47594. doi:10.1021/acsami.2c11701
DOI: doi:10.1021/acsami.2c11701
ISSN: 1944-8244
EISSN: 1944-8252
Pages: 47587 - 47594
Language: en
Type of Material: Journal Article
Journal/Proceeding Title: ACS Applied Materials & Interfaces
Version: Final published version. This is an open access article.

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