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|Abstract:||Metal halide perovskite semiconductors have shown great potential as emissive layers in light-emitting diodes and gain media in optically pumped lasers, and thus represent a possible foundation for a non-epitaxial electrically driven laser diode. However, degradation of perovskite-based devices and inability to maintain high-efficiency operation at large current densities have so far inhibited realization of this goal. This report will explore the causes underlying these observations - specifically, Joule heating, electric field-induced quenching, charge injection imbalance, and Auger recombination - and consider approaches to achieve an electrically driven perovskite laser diode.|
|Citation:||Gunnarsson, WB, Rand, BP. (2020). Electrically driven lasing in metal halide perovskites: Challenges and outlook. APL Materials, 8 (10.1063/1.5143265|
|Type of Material:||Journal Article|
|Journal/Proceeding Title:||APL Materials|
|Version:||Final published version. This is an open access article.|
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