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|Abstract:||We present the growth and characterization of ZnCdSe/ZnCdMgSe quantum cascade (QC) heterostructures grown by molecular beam epitaxy (MBE) and designed to operate at 6–8 μm. These structures utilize the better-understood ZnCdMgSe with InP lattice matched compositions yielding a bandgap of 2.80 eV as compared to previous work which used ZnCdMgSe compositions with bandgaps at 3.00 eV. Grown structures posses good structural and optical properties evidenced in X-ray diffraction and photoluminescence studies. Fabricated mesa devices show temperature dependent I–V measurements with differential resistance of 3.6 Ω, and a turn on voltage of 11 V consistent with design specifications. Electroluminescence was observed in these devices up to room temperature with emission centered at 7.1 μm and line-widths of ∼16% (ΔE/E) at 80 K. The results show that these are well-behaved electroluminescent structures. Addition of waveguide layers and further improvements in well barrier interfaces are being pursued in efforts to demonstrate lasing.|
|Citation:||Garcia, TA, De Jesus, J, Ravikumar, AP, Gmachl, CF, Tamargo, MC. (2016). II–VI quantum cascade emitters in the 6–8 μm range. Physica Status Solidi (B) Basic Research, 253 (1494 - 1497. doi:10.1002/pssb.201600135|
|Pages:||1494 - 1497|
|Type of Material:||Journal Article|
|Journal/Proceeding Title:||Physica Status Solidi (B) Basic Research|
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