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Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics

Author(s): Avasthi, Sushobhan; Sturm, James C.; Schwartz, Jeffrey; Kahn, Antoine; Man, Gabriel; et al

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Abstract: In contrast to the numerous reports on narrow-bandgap heterojunctions on silicon, such as strained Si1-xGex on silicon, there have been very few accounts of wide-bandgap semiconducting heterojunctions on silicon. Here, we present a wide-bandgap heterojunction - between titanium oxide and crystalline silicon - where the titanium oxide is deposited via a metal-organic chemical vapor deposition process at substrate temperatures of only 80-100 °C. The deposited films are conformal and smooth at the nanometer scale. Electrically, the TiO2/Si heterojunction prevents transport of holes while allowing transport of electrons. This selective carrier blocking is used to demonstrate a low-temperature processed silicon solar cell. © 2013 AIP Publishing LLC.
Publication Date: 20-May-2013
Electronic Publication Date: 21-May-2013
Citation: Avasthi, S., McClain, W.E., Man, G., Kahn, A., Schwartz, J., Sturm, J.C. (2013). Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics. Applied Physics Letters, 102 (10.1063/1.4803446
DOI: doi:10.1063/1.4803446
Pages: 102.20:203901-1 - 203901-5
Type of Material: Journal Article
Journal/Proceeding Title: Applied Physics Letters
Version: Final published version. Article is made available in OAR by the publisher's permission or policy.
Notes: Applied Physics Letters. Volume 102, Issue 20, 20 May 2013, Article number 203901.

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