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High-fidelity quantum gates in Si/SiGe double quantum dots

Author(s): Russ, Maximilian; Zajac, DM; Sigillito, AJ; Borjans, F; Taylor, JM; et al

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Abstract: Motivated by recent experiments of Zajac et al. [Science 359, 439 (2018)], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. We present a synchronization method which avoids detrimental spin flips during the gate operation and provide details about phase mismatches accumulated during the two-qubit gates which occur due to residual exchange interaction, nonadiabatic pulses, and off-resonant driving. By adjusting the gate times, synchronizing the resonant and off-resonant transitions, and compensating these phase mismatches by phase control, the overall gate fidelity can be increased significantly.
Publication Date: 15-Feb-2018
Electronic Publication Date: 15-Feb-2018
Citation: Russ, Maximilian, Zajac, DM, Sigillito, AJ, Borjans, F, Taylor, JM, Petta, JR, Burkard, Guido. (2018). High-fidelity quantum gates in Si/SiGe double quantum dots. PHYSICAL REVIEW B, 97 (10.1103/PhysRevB.97.085421
DOI: doi:10.1103/PhysRevB.97.085421
ISSN: 2469-9950
EISSN: 2469-9969
Type of Material: Journal Article
Journal/Proceeding Title: PHYSICAL REVIEW B
Version: Final published version. Article is made available in OAR by the publisher's permission or policy.

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