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High-fidelity quantum gates in Si/SiGe double quantum dots

Author(s): Russ, Maximilian; Zajac, DM; Sigillito, AJ; Borjans, F; Taylor, JM; et al

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dc.contributor.authorRuss, Maximilian-
dc.contributor.authorZajac, DM-
dc.contributor.authorSigillito, AJ-
dc.contributor.authorBorjans, F-
dc.contributor.authorTaylor, JM-
dc.contributor.authorPetta, Jason R-
dc.contributor.authorBurkard, Guido-
dc.date.accessioned2018-07-20T15:10:36Z-
dc.date.available2018-07-20T15:10:36Z-
dc.date.issued2018-02-15en_US
dc.identifier.citationRuss, Maximilian, Zajac, DM, Sigillito, AJ, Borjans, F, Taylor, JM, Petta, JR, Burkard, Guido. (2018). High-fidelity quantum gates in Si/SiGe double quantum dots. PHYSICAL REVIEW B, 97 (10.1103/PhysRevB.97.085421en_US
dc.identifier.issn2469-9950-
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1zx0m-
dc.description.abstractMotivated by recent experiments of Zajac et al. [Science 359, 439 (2018)], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. We present a synchronization method which avoids detrimental spin flips during the gate operation and provide details about phase mismatches accumulated during the two-qubit gates which occur due to residual exchange interaction, nonadiabatic pulses, and off-resonant driving. By adjusting the gate times, synchronizing the resonant and off-resonant transitions, and compensating these phase mismatches by phase control, the overall gate fidelity can be increased significantly.en_US
dc.language.isoenen_US
dc.relation.ispartofPHYSICAL REVIEW Ben_US
dc.rightsFinal published version. Article is made available in OAR by the publisher's permission or policy.en_US
dc.titleHigh-fidelity quantum gates in Si/SiGe double quantum dotsen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1103/PhysRevB.97.085421-
dc.date.eissued2018-02-15en_US
dc.identifier.eissn2469-9969-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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