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Optical conductivity of bismuth-based topological insulators

Author(s): Di Pietro, Paola; Vitucci, Francesco Maria; Nicoletti, Daniele; Baldassarre, Leonetta; Calvani, Paolo; et al

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dc.contributor.authorDi Pietro, Paola-
dc.contributor.authorVitucci, Francesco Maria-
dc.contributor.authorNicoletti, Daniele-
dc.contributor.authorBaldassarre, Leonetta-
dc.contributor.authorCalvani, Paolo-
dc.contributor.authorCava, Robert Joseph-
dc.contributor.authorHor, Yew San-
dc.contributor.authorSchade, Ullrich-
dc.contributor.authorLupi, Stefano-
dc.date.accessioned2020-10-27T18:31:32Z-
dc.date.available2020-10-27T18:31:32Z-
dc.date.issued2012-07-15en_US
dc.identifier.citationDi Pietro, P., Vitucci, F.M., Nicoletti, D., Baldassarre, L., Calvani, P., Cava, R., Hor, Y.S., Schade, U., Lupi, S. (2012). Optical conductivity of bismuth-based topological insulators. Physical Review B - Condensed Matter and Materials Physics, 86 (4), 10.1103/PhysRevB.86.045439en_US
dc.identifier.issn1098-0121-
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1wz3j-
dc.descriptionPhysical Review B - Condensed Matter and Materials Physics. Volume 86, Issue 4, 24 July 2012, Article number 045439.en_US
dc.description.abstractThe optical conductivity σ1(ω) and the spectral weight SW of four topological insulators with increasing chemical compensation (Bi2Se3,Bi2Se2Te,Bi 2-xCaxSe3, and Bi2Te2Se) have been measured from 5 to 300 K and from subterahertz to visible frequencies. The effect of compensation is clearly observed in the infrared spectra through the suppression of an extrinsic Drude term and the appearance of strong absorption peaks that we assign to electronic transitions among localized states. From the far-infrared spectral weight SW of the most compensated sample (Bi2Te2Se), one can estimate a density of charge carriers on the order of 1017/cm3 in good agreement with transport data. Those results demonstrate that the low-energy electrodynamics in single crystals of topological insulators, even at the highest degree of compensation presently achieved, is still influenced by three-dimensional charge excitations. © 2012 American Physical Society.en_US
dc.format.extent86.4:04539-1 -04539-5en_US
dc.language.isoenen_US
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_US
dc.rightsFinal published version. This is an open access article.en_US
dc.titleOptical conductivity of bismuth-based topological insulatorsen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1103/PhysRevB.86.045439-
dc.date.eissued2012-07-24en_US
dc.identifier.eissn1550-235X-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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