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High-Resolution Valley Spectroscopy of Si Quantum Dots

Author(s): Mi, X; Peterfalvi, Csaba G; Burkard, Guido; Petta, Jason R

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Abstract: We study an accumulation mode Si/SiGe double quantum dot (DQD) containing a single electron that is dipole coupled to microwave photons in a superconducting cavity. Measurements of the cavity transmission reveal dispersive features due to the DQD valley states in Si. The occupation of the valley states can be increased by raising the temperature or applying a finite source-drain bias across the DQD, resulting in an increased signal. Using the cavity input-output theory and a four-level model of the DQD, it is possible to efficiently extract valley splittings and the inter- and intravalley tunnel couplings.
Publication Date: 27-Oct-2017
Electronic Publication Date: 24-Oct-2017
Citation: Mi, X, Peterfalvi, Csaba G, Burkard, Guido, Petta, JR. (2017). High-Resolution Valley Spectroscopy of Si Quantum Dots. PHYSICAL REVIEW LETTERS, 119 (10.1103/PhysRevLett.119.176803
DOI: doi:10.1103/PhysRevLett.119.176803
ISSN: 0031-9007
EISSN: 1079-7114
Type of Material: Journal Article
Journal/Proceeding Title: PHYSICAL REVIEW LETTERS
Version: Final published version. Article is made available in OAR by the publisher's permission or policy.

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