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Separating the bulk and surface n- to p-type transition in the topological insulator GeBi4−xSbxTe7

Author(s): Muff, Stefan; von Rohr, Fabian; Landolt, Gabriel; Slomski, Bartosz; Schilling, Andreas; et al

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Abstract: We identify the multilayered compound GeBi4Te7 to be a topological insulator with a Dirac point slightly above the valence band maximum, using angle-resolved photoemission spectroscopy (ARPES) measurements. The spin polarization satisfies the time reversal symmetry of the surface states, visible in spin-resolved ARPES. For increasing Sb content in GeBi 4-xSbxTe7 we observe a transition from n to p type in bulk sensitive Seebeck coefficient measurements at a doping of x=0.6. In surface sensitive ARPES measurements a rigid band shift is observed with Sb doping, accompanied by a movement of the Dirac point towards the Fermi level. Between x=0.8 and x=1 the Fermi level crosses the band gap, changing the surface transport regime. This difference of the n- to p-type transition between the surface region and the bulk is caused by band bending effects which are also responsible for a noncoexistence of insulating phases in the bulk and in the near surface region. © 2013 American Physical Society.
Publication Date: Jul-2013
Electronic Publication Date: 3-Jul-2013
Citation: Muff, Stefan, von Rohr, Fabian, Landolt, Gabriel, Slomski, Bartosz, Schilling, Andreas, Cava, Robert J., Osterwalder, Jürg, Dil, J. Hugo. (2013). Separating the bulk and surface - to -type transition in the topological insulator GeBi Sb Te. Physical Review B, 88 (3), 10.1103/PhysRevB.88.035407
DOI: doi:10.1103/PhysRevB.88.035407
ISSN: 1098-0121
EISSN: 1550-235X
Pages: 88.3:035407-1 - 035407-6
Type of Material: Journal Article
Journal/Proceeding Title: Physical Review B
Version: Final published version. Article is made available in OAR by the publisher's permission or policy.
Notes: Physical Review B - Condensed Matter and Materials Physics. Volume 88, Issue 3, 3 July 2013, Article number 035407.

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