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Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode

Author(s): Hayat, Alex; Zareapour, Parisa; Zhao, Shu Yang F.; Jain, Achint; Savelyev, Igor G.; et al

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Abstract: We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-Tc-superconductor-semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+δ combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor-normal-material junction. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+δ combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.
Publication Date: Dec-2012
Electronic Publication Date: 27-Dec-2012
Citation: Hayat, Alex, Zareapour, Parisa, Zhao, Shu Yang F., Jain, Achint, Savelyev, Igor G., Blumin, Marina, Xu, Zhijun, Yang, Alina, Gu, Genda, Ruda, Harry E., Jia, Shuang, Cava, Robert J., Steinberg, Aephraim M., Burch, Kenneth S. (2012). Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode. Physical Review X, 2 (4), 10.1103/PhysRevX.2.041019
DOI: doi:10.1103/PhysRevX.2.041019
EISSN: 2160-3308
Pages: 2.4:041019-1 - 041019-7
Type of Material: Journal Article
Journal/Proceeding Title: Physical Review X
Version: Final published version. This is an open access article.
Notes: Physical Review X. Volume 2, Issue 4, 2012, Article number 041019.

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