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A New Magnetic Topological Quantum Material Candidate by Design

Author(s): Gui, X; Pletikosic, I; Cao, H; Tien, HJ; Xu, X; et al

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Abstract: Magnetism, when combined with an unconventional electronic band structure, can give rise to forefront electronic properties such as the quantum anomalous Hall effect, axion electrodynamics, and Majorana fermions. Here we report the characterization of high-quality crystals of EuSn 2 P 2 , a new quantum material specifically designed to engender unconventional electronic states plus magnetism. EuSn 2 P 2 has a layered, Bi 2 Te 3 -type structure. Ferromagnetic interactions dominate the Curie-Weiss susceptibility, but a transition to antiferromagnetic ordering occurs near 30 K. Neutron diffraction reveals that this is due to two-dimensional ferromagnetic spin alignment within individual Eu layers and antiferromagnetic alignment between layers - this magnetic state surrounds the Sn-P layers at low temperatures. The bulk electrical resistivity is sensitive to the magnetism. Electronic structure calculations reveal that EuSn 2 P 2 might be a strong topological insulator, which can be a new magnetic topological quantum material (MTQM) candidate. The calculations show that surface states should be present, and they are indeed observed by angle-resolved photoelectron spectroscopy (ARPES) measurements.
Publication Date: 1-Jan-2019
Citation: Gui, X, Pletikosic, I, Cao, H, Tien, HJ, Xu, X, Zhong, R, Wang, G, Chang, TR, Jia, S, Valla, T, Xie, W, Cava, RJ. (2019). A New Magnetic Topological Quantum Material Candidate by Design. ACS Central Science, 10.1021/acscentsci.9b00202
DOI: doi:10.1021/acscentsci.9b00202
ISSN: 2374-7943
EISSN: 2374-7951
Pages: 900 - 910
Type of Material: Journal Article
Journal/Proceeding Title: ACS Central Science
Version: Final published version. Article is made available in OAR by the publisher's permission or policy.

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