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Anomalous composition dependence of the superconductivity in In-doped SnTe

Author(s): Haldolaarachchige, Neel; Gibson, Quinn; Xie, Weiwei; Nielsen, Morten Bormann; Kushwaha, Satya; et al

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Abstract: We report a reinvestigation of superconducting Sn1-xInxTe at both low and high In doping levels. Considering the system over a broad composition range in a single study allows us to characterize a significant change in the properties as a function of x: The system evolves from a weakly coupled p-type superconductor to a strongly coupled n-type superconductor with increasing indium content. Hall effect measurements show that the carrier density does not vary monotonically with indium content; a change from p-type to n-type is observed near 10% In doping. This is contrary to expectations dictating that In should be a p-type dopant in semiconducting SnTe, because it has one less valance electron than Sn. A crystallographic search for point defects at high x indicates that the material remains ideal NaCl-type over a wide composition range. Density functional theory calculations for In-doped SnTe support a picture where In does not act as a trivial hole dopant but instead forms a distinct, partly filled In 5s-Te5p hybridized state centered around EF, which is very different from what is seen for other nominal hole dopants such as Na, Ag, and vacant Sn sites. © 2016 American Physical Society.
Publication Date: Jan-2016
Electronic Publication Date: 26-Jan-2016
Citation: Haldolaarachchige, Neel, Gibson, Quinn, Xie, Weiwei, Nielsen, Morten Bormann, Kushwaha, Satya, Cava, RJ. (2016). Anomalous composition dependence of the superconductivity in In-doped SnTe. Physical Review B, 93 (2), 10.1103/PhysRevB.93.024520
DOI: doi:10.1103/PhysRevB.93.024520
ISSN: 2469-9950
EISSN: 2469-9969
Pages: 93.2:024520-1 - 024520-8
Type of Material: Journal Article
Journal/Proceeding Title: Physical Review B
Version: Final published version. This is an open access article.
Notes: Volume 93, Issue 2, 26 January 2016, Article number 024520.

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