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Magnetic cations doped into a double perovskite semiconductor

Author(s): Jin, Lun; Ni, Danrui; Gui, Xin; Straus, Daniel B; Zhang, Qiang; et al

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dc.contributor.authorJin, Lun-
dc.contributor.authorNi, Danrui-
dc.contributor.authorGui, Xin-
dc.contributor.authorStraus, Daniel B-
dc.contributor.authorZhang, Qiang-
dc.contributor.authorCava, Robert J-
dc.date.accessioned2024-12-19T16:18:06Z-
dc.date.available2024-12-19T16:18:06Z-
dc.date.issued2022-01-26en_US
dc.identifier.citationJin, Lun, Ni, Danrui, Gui, Xin, Straus, Daniel B, Zhang, Qiang, Cava, Robert J. Magnetic cations doped into a double perovskite semiconductor. Journal of Materials Chemistry C, 10 (8), 3232 - 3240. doi:10.1039/d1tc05585ben_US
dc.identifier.issn2050-7526-
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1mk6585j-
dc.description.abstractWe report two solid solutions based on the magnetic ion doping of the double perovskite oxide Sr2GaSbO6: Sr2Ga1−xCrxSbO6 (0.1 ≤ x ≤ 0.4) and Sr2Ga1−xFexSbO6 (0.1 ≤ x ≤ 0.4). All compositions crystallize in the same space group (I4/m) as their undoped parent phase Sr2GaSbO6, with the trivalent magnetic cations Cr3+ or Fe3+ partially substituting for non-magnetic Ga3+ in one of the B-cation sites. The Cr- and Fe-doped phases display dominant antiferromagnetic coupling among the dopant magnetic moments, and exhibit decreasing band gaps with increasing substitution level.en_US
dc.format.extent3232 - 3240en_US
dc.languageenen_US
dc.language.isoen_USen_US
dc.relation.ispartofJournal of Materials Chemistry Cen_US
dc.rightsAuthor's manuscripten_US
dc.titleMagnetic cations doped into a double perovskite semiconductoren_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1039/d1tc05585b-
dc.identifier.eissn2050-7534-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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