Skip to main content

Electronic Structure Basis for the Extraordinary Magnetoresistance in

Author(s): Pletikosić, Ivo; Ali, Mazhar N; Fedorov, AV; Cava, Robert J; Valla, T

To refer to this page use:
Abstract: The electronic structure basis of the extremely large magnetoresistance in layered nonmagnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at low temperatures, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. A change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior of the magnetoresistance in WTe2 was identified.
Publication Date: Nov-2014
Electronic Publication Date: 19-Nov-2014
Citation: Pletikosić, I, Ali, Mazhar N, Fedorov, AV, Cava, RJ, Valla, T. (2014). Electronic Structure Basis for the Extraordinary Magnetoresistance in. Physical Review Letters, 113 (21), 10.1103/PhysRevLett.113.216601
DOI: doi:10.1103/PhysRevLett.113.216601
ISSN: 0031-9007
EISSN: 1079-7114
Pages: 216601-1 - 216601-5
Type of Material: Journal Article
Journal/Proceeding Title: Physical Review Letters
Version: Final published version. Article is made available in OAR by the publisher's permission or policy.

Items in OAR@Princeton are protected by copyright, with all rights reserved, unless otherwise indicated.