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Generation of nanoscale anticounterfeiting patterns on silicon by optical trap assisted nanopatterning

Author(s): Chen, T-H; Tsai, Y-C; Fardel, R; Arnold, Craig B

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dc.contributor.authorChen, T-H-
dc.contributor.authorTsai, Y-C-
dc.contributor.authorFardel, R-
dc.contributor.authorArnold, Craig B-
dc.date.accessioned2020-03-31T21:36:16Z-
dc.date.available2020-03-31T21:36:16Z-
dc.date.issued2017-02en_US
dc.identifier.citationChen, T-H, Tsai, Y-C, Fardel, R, Arnold, CB. (2017). Generation of nanoscale anticounterfeiting patterns on silicon by optical trap assisted nanopatterning. Journal of Laser Applications, 29 (1), 012006 - 012006. doi:10.2351/1.4966590en_US
dc.identifier.issn1042-346X-
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1cv37-
dc.description.abstractAmong the different strategies aimed at protecting products from counterfeiting, hidden securitypatterns are used by manufacturers to mark their products in a unique way. However, mostanticounterfeiting patterns bear the risk of being reproduced by an unauthorized party who hasgained knowledge of the exact technique and process parameters. In this paper, we use optical trapassisted nanopatterning to create unique security markings by taking advantage of statisticalfluctuations when generating nanoscale features within the pattern. We image the patterns byoptical microscopy, scanning electron microscopy, and atomic force microscopy and propose athree-level examination process that allows for an efficient yet highly secure authentication.en_US
dc.format.extent012006 - 012006en_US
dc.language.isoen_USen_US
dc.relation.ispartofJournal of Laser Applicationsen_US
dc.rightsFinal published version. Article is made available in OAR by the publisher's permission or policy.en_US
dc.titleGeneration of nanoscale anticounterfeiting patterns on silicon by optical trap assisted nanopatterningen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.2351/1.4966590-
dc.identifier.eissn1938-1387-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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