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Gapped Surface States in a Strong-Topological-Insulator Material

Author(s): Weber, Andrew P.; Gibson, Quinn D.; Ji, Huiwen; Caruso, Anthony N.; Fedorov, A.V.; et al

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dc.contributor.authorWeber, Andrew P.-
dc.contributor.authorGibson, Quinn D.-
dc.contributor.authorJi, Huiwen-
dc.contributor.authorCaruso, Anthony N.-
dc.contributor.authorFedorov, A.V.-
dc.contributor.authorCava, Robert Joseph-
dc.contributor.authorValla, Tonica-
dc.date.accessioned2020-10-27T18:31:22Z-
dc.date.available2020-10-27T18:31:22Z-
dc.date.issued2015-06en_US
dc.identifier.citationWeber, Andrew P., Gibson, Quinn D., Ji, Huiwen, Caruso, Anthony N., Fedorov, A.V., Cava, Robert J., Valla, Tonica (2015). Gapped Surface States in a Strong-Topological-Insulator Material. Physical Review Letters, 114 (25), 10.1103/PhysRevLett.114.256401en_US
dc.identifier.issn0031-9007-
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1c51t-
dc.descriptionPhysical Review Letters. Volume 114, Issue 25, 23 June 2015, Article number 256401.en_US
dc.description.abstractA three-dimensional strong-topological insulator or semimetal hosts topological surface states which are often said to be gapless so long as time-reversal symmetry is preserved. This narrative can be mistaken when surface state degeneracies occur away from time-reversal-invariant momenta. The mirror invariance of the system then becomes essential in protecting the existence of a surface Fermi surface. Here we show that such a case exists in the strong-topological-semimetal Bi4Se3. Angle-resolved photoemission spectroscopy and ab initio calculations reveal partial gapping of surface bands on the Bi2Se3 termination of Bi4Se3(111), where an 85 meV gap along Γ¯K¯ closes to zero toward the mirror-invariant Γ¯M¯ azimuth. The gap opening is attributed to an interband spin-orbit interaction that mixes states of opposite spin helicity. © 2015 American Physical Society.en_US
dc.format.extent114.25:256401-1 - 258401-5en_US
dc.language.isoen_USen_US
dc.relation.ispartofPhysical Review Lettersen_US
dc.rightsFinal published version. This is an open access article.en_US
dc.titleGapped Surface States in a Strong-Topological-Insulator Materialen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1103/PhysRevLett.114.256401-
dc.date.eissued2015-06-23en_US
dc.identifier.eissn1079-7114-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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