Gapped Surface States in a Strong-Topological-Insulator Material
Author(s): Weber, Andrew P.; Gibson, Quinn D.; Ji, Huiwen; Caruso, Anthony N.; Fedorov, A.V.; et al
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Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Weber, Andrew P. | - |
dc.contributor.author | Gibson, Quinn D. | - |
dc.contributor.author | Ji, Huiwen | - |
dc.contributor.author | Caruso, Anthony N. | - |
dc.contributor.author | Fedorov, A.V. | - |
dc.contributor.author | Cava, Robert Joseph | - |
dc.contributor.author | Valla, Tonica | - |
dc.date.accessioned | 2020-10-27T18:31:22Z | - |
dc.date.available | 2020-10-27T18:31:22Z | - |
dc.date.issued | 2015-06 | en_US |
dc.identifier.citation | Weber, Andrew P., Gibson, Quinn D., Ji, Huiwen, Caruso, Anthony N., Fedorov, A.V., Cava, Robert J., Valla, Tonica (2015). Gapped Surface States in a Strong-Topological-Insulator Material. Physical Review Letters, 114 (25), 10.1103/PhysRevLett.114.256401 | en_US |
dc.identifier.issn | 0031-9007 | - |
dc.identifier.uri | http://arks.princeton.edu/ark:/88435/pr1c51t | - |
dc.description | Physical Review Letters. Volume 114, Issue 25, 23 June 2015, Article number 256401. | en_US |
dc.description.abstract | A three-dimensional strong-topological insulator or semimetal hosts topological surface states which are often said to be gapless so long as time-reversal symmetry is preserved. This narrative can be mistaken when surface state degeneracies occur away from time-reversal-invariant momenta. The mirror invariance of the system then becomes essential in protecting the existence of a surface Fermi surface. Here we show that such a case exists in the strong-topological-semimetal Bi4Se3. Angle-resolved photoemission spectroscopy and ab initio calculations reveal partial gapping of surface bands on the Bi2Se3 termination of Bi4Se3(111), where an 85 meV gap along Γ¯K¯ closes to zero toward the mirror-invariant Γ¯M¯ azimuth. The gap opening is attributed to an interband spin-orbit interaction that mixes states of opposite spin helicity. © 2015 American Physical Society. | en_US |
dc.format.extent | 114.25:256401-1 - 258401-5 | en_US |
dc.language.iso | en_US | en_US |
dc.relation.ispartof | Physical Review Letters | en_US |
dc.rights | Final published version. This is an open access article. | en_US |
dc.title | Gapped Surface States in a Strong-Topological-Insulator Material | en_US |
dc.type | Journal Article | en_US |
dc.identifier.doi | doi:10.1103/PhysRevLett.114.256401 | - |
dc.date.eissued | 2015-06-23 | en_US |
dc.identifier.eissn | 1079-7114 | - |
pu.type.symplectic | http://www.symplectic.co.uk/publications/atom-terms/1.0/journal-article | en_US |
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PhysRevLett.114.256401.pdf | 1.19 MB | Adobe PDF | View/Download | |
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