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|Abstract:||We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots, and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 mu eV. By energizing two additional gates, we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition. (c) 2015 AIP Publishing LLC.|
|Electronic Publication Date:||Jun-2015|
|Citation:||Zajac, DM, Hazard, TM, Mi, X, Wang, K, Petta, JR. (2015). A reconfigurable gate architecture for Si/SiGe quantum dots. APPLIED PHYSICS LETTERS, 106 (10.1063/1.4922249|
|Type of Material:||Journal Article|
|Journal/Proceeding Title:||APPLIED PHYSICS LETTERS|
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