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A reconfigurable gate architecture for Si/SiGe quantum dots

Author(s): Zajac, DM; Hazard, TM; Mi, X; Wang, K; Petta, Jason R

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Abstract: We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots, and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 mu eV. By energizing two additional gates, we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition. (c) 2015 AIP Publishing LLC.
Publication Date: 1-Jun-2015
Electronic Publication Date: Jun-2015
Citation: Zajac, DM, Hazard, TM, Mi, X, Wang, K, Petta, JR. (2015). A reconfigurable gate architecture for Si/SiGe quantum dots. APPLIED PHYSICS LETTERS, 106 (10.1063/1.4922249
DOI: doi:10.1063/1.4922249
ISSN: 0003-6951
EISSN: 1077-3118
Type of Material: Journal Article
Journal/Proceeding Title: APPLIED PHYSICS LETTERS
Version: Author's manuscript

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