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A reconfigurable gate architecture for Si/SiGe quantum dots

Author(s): Zajac, DM; Hazard, TM; Mi, X; Wang, K; Petta, Jason R

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dc.contributor.authorZajac, DM-
dc.contributor.authorHazard, TM-
dc.contributor.authorMi, X-
dc.contributor.authorWang, K-
dc.contributor.authorPetta, Jason R-
dc.date.accessioned2018-07-20T15:09:28Z-
dc.date.available2018-07-20T15:09:28Z-
dc.date.issued2015-06-01en_US
dc.identifier.citationZajac, DM, Hazard, TM, Mi, X, Wang, K, Petta, JR. (2015). A reconfigurable gate architecture for Si/SiGe quantum dots. APPLIED PHYSICS LETTERS, 106 (10.1063/1.4922249en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr19x02-
dc.description.abstractWe demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots, and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 mu eV. By energizing two additional gates, we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition. (c) 2015 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.relation.ispartofAPPLIED PHYSICS LETTERSen_US
dc.rightsAuthor's manuscripten_US
dc.titleA reconfigurable gate architecture for Si/SiGe quantum dotsen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1063/1.4922249-
dc.date.eissued2015-06en_US
dc.identifier.eissn1077-3118-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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