Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe
Author(s): Pletikosić, Ivo's; Von Rohr, Fabian O.; Pervan, Petar; Das, Pranab Kumar; Vobornik, Ivana; et al
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Abstract: | © 2018 American Physical Society. The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in the presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust and isoelectronic and share the same structure with black phosphorus. We measure the band structure of SnSe and find highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown great promise. |
Publication Date: | 10-Apr-2018 |
Citation: | Pletikosić, I., Von Rohr, F., Pervan, P., Das, P.K., Vobornik, I., Cava, R.J., Valla, T. (2018). Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe. Physical Review Letters, 120 (15), 10.1103/PhysRevLett.120.156403 |
DOI: | doi:10.1103/PhysRevLett.120.156403 |
ISSN: | 0031-9007 |
EISSN: | 1079-7114 |
Pages: | 120.15:156403-1 - 156403-5 |
Type of Material: | Journal Article |
Journal/Proceeding Title: | Physical Review Letters |
Version: | Final published version. This is an open access article. |
Notes: | Physical Review Letters. Volume 120, Issue 15, 10 April 2018, Article number 156403. |
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