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Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe

Author(s): Pletikosić, Ivo's; Von Rohr, Fabian O.; Pervan, Petar; Das, Pranab Kumar; Vobornik, Ivana; et al

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Abstract: © 2018 American Physical Society. The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in the presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust and isoelectronic and share the same structure with black phosphorus. We measure the band structure of SnSe and find highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown great promise.
Publication Date: 10-Apr-2018
Citation: Pletikosić, I., Von Rohr, F., Pervan, P., Das, P.K., Vobornik, I., Cava, R.J., Valla, T. (2018). Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe. Physical Review Letters, 120 (15), 10.1103/PhysRevLett.120.156403
DOI: doi:10.1103/PhysRevLett.120.156403
ISSN: 0031-9007
EISSN: 1079-7114
Pages: 120.15:156403-1 - 156403-5
Type of Material: Journal Article
Journal/Proceeding Title: Physical Review Letters
Version: Final published version. This is an open access article.
Notes: Physical Review Letters. Volume 120, Issue 15, 10 April 2018, Article number 156403.

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