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Bi 2Te 1.6S 1.4: A topological insulator in the tetradymite family

Author(s): Ji, Huiwen; Allred, Jared M.; Fuccillo, Michael K.; Charles, M.E.; Neupane, Madhab; et al

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Abstract: We describe the crystal growth, crystal structure, and basic electrical properties of Bi 2Te 1.6S 1.4, which incorporates both S and Te in its tetradymite quintuple layers in the motif -[Te 0.8S 0.2]-Bi-S-Bi-[Te 0.8S 0.2]-. This material differs from other tetradymites studied as topological insulators due to the increased ionic character that arises from its significant S content. Bi 2Te 1.6S 1.4 forms high quality crystals from the melt and is the S-rich limit of the ternary Bi-Te-S γ-tetradymite phase at the melting point. The native material is n type with a low resistivity; Sb substitution, and with adjustment of the Te to S ratio, results in a crossover to p type and resistive behavior at low temperatures. An angle-resolved photoemission study shows that topological surface states are present, with the Dirac point more exposed than it is in Bi 2Te 3 and similar to that seen in Bi 2Te 2Se. Single crystal structure determination indicates that the S in the outer chalcogen layers is closer to the Bi than the Te, and therefore that the layers supporting the surface states are corrugated on the atomic scale. © 2012 American Physical Society.
Publication Date: May-2012
Electronic Publication Date: 15-May-2012
Citation: Ji, Huiwen, Allred, J.M., Fuccillo, M.K., Charles, M.E., Neupane, M., Wray, L.A., Hasan, M.Z., Cava, R.J. (2012). Bi Te S : A topological insulator in the tetradymite family. Physical Review B, 85 (20), 10.1103/PhysRevB.85.201103
DOI: doi:10.1103/PhysRevB.85.201103
ISSN: 1098-0121
EISSN: 1550-235X
Pages: 85.20:201103-1 - 201103-5
Type of Material: Journal Article
Journal/Proceeding Title: Physical Review B
Version: Final published version. This is an open access article.
Notes: Physical Review B - Condensed Matter and Materials Physics. Volume 85, Issue 20, 15 May 2012, Article number 201103.

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