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Threshold Dynamics of a Semiconductor Single Atom Maser

Author(s): Liu, Y-Y; Stehlik, J; Eichler, C; Mi, X; Hartke, TR; et al

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Abstract: We demonstrate a single atom maser consisting of a semiconductor double quantum dot (DQD) that is embedded in a high-quality-factor microwave cavity. A finite bias drives the DQD out of equilibrium, resulting in sequential single electron tunneling and masing. We develop a dynamic tuning protocol that allows us to controllably increase the time-averaged repumping rate of the DQD at a fixed level detuning, and quantitatively study the transition through the masing threshold. We further examine the crossover from incoherent to coherent emission by measuring the photon statistics across the masing transition. The observed threshold behavior is in agreement with an existing single atom maser theory when small corrections from lead emission are taken into account.
Publication Date: 1-Sep-2017
Electronic Publication Date: 31-Aug-2017
Citation: Liu, Y-Y, Stehlik, J, Eichler, C, Mi, X, Hartke, TR, Gullans, MJ, Taylor, JM, Petta, JR. (2017). Threshold Dynamics of a Semiconductor Single Atom Maser. PHYSICAL REVIEW LETTERS, 119 (10.1103/PhysRevLett.119.097702
DOI: doi:10.1103/PhysRevLett.119.097702
ISSN: 0031-9007
EISSN: 1079-7114
Type of Material: Journal Article
Journal/Proceeding Title: PHYSICAL REVIEW LETTERS
Version: Final published version. Article is made available in OAR by the publisher's permission or policy.

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