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Tunability of the topological nodal-line semimetal phase in ZrSiX-type materials

Author(s): Hosen, M Mofazzel; Dimitri, Klauss; Belopolski, Ilya; Maldonado, Pablo; Sankar, Raman; et al

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Abstract: The discovery of a topological nodal-line (TNL) semimetal phase in ZrSiS has invigorated the study of other members of this family. Here, we present a comparative electronic structure study of ZrSiX (where X = S, Se, Te) using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. Our ARPES studies show that the overall electronic structure of ZrSiX materials comprises of the diamond-shaped Fermi pocket, the nearly elliptical-shaped Fermi pocket, and a small electron pocket encircling the zone center ($\Gamma$) point, the M point, and the X point of the Brillouin zone, respectively. We also observe a small Fermi surface pocket along the M-$\Gamma$-M direction in ZrSiTe, which is absent in both ZrSiS and ZrSiSe. Furthermore, our theoretical studies show a transition from nodal-line to nodeless gapped phase by tuning the chalcogenide from S to Te in these material systems. Our findings provide direct evidence for the tunability of the TNL phase in ZrSiX material systems by adjusting the spin-orbit coupling (SOC) strength via the X anion.
Publication Date: 3-Apr-2017
Electronic Publication Date: 3-Apr-2017
Citation: Hosen, M Mofazzel, Dimitri, Klauss, Belopolski, Ilya, Maldonado, Pablo, Sankar, Raman, Dhakal, Nagendra, Dhakal, Gyanendra, Cole, Taiason, Oppeneer, Peter M, Kaczorowski, Dariusz, Chou, Fangcheng, Hasan, M Zahid, Durakiewicz, Tomasz, Neupane, Madhab. (Tunability of the topological nodal-line semimetal phase in ZrSiX-type materials. Phys. Rev. B, 95 (161101-1 to 161101-6. doi:10.1103/PhysRevB.95.161101
DOI: doi:10.1103/PhysRevB.95.161101
Pages: 161101-1 to 161101-6
Type of Material: Journal Article
Journal/Proceeding Title: Phys. Rev. B
Version: Final published version. Article is made available in OAR by the publisher's permission or policy.

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