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Injection locking of a semiconductor double-quantum-dot micromaser

Author(s): Liu, Y-Y; Stehlik, J; Gullans, MJ; Taylor, JM; Petta, Jason R

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dc.contributor.authorLiu, Y-Y-
dc.contributor.authorStehlik, J-
dc.contributor.authorGullans, MJ-
dc.contributor.authorTaylor, JM-
dc.contributor.authorPetta, Jason R-
dc.date.accessioned2018-07-20T15:10:00Z-
dc.date.available2018-07-20T15:10:00Z-
dc.date.issued2015-11en_US
dc.identifier.citationLiu, Y-Y, Stehlik, J, Gullans, MJ, Taylor, JM, Petta, JR. (2015). Injection locking of a semiconductor double-quantum-dot micromaser. PHYSICAL REVIEW A, 92 (10.1103/PhysRevA.92.053802en_US
dc.identifier.issn2469-9926-
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1nx0h-
dc.description.abstractThe semiconductor double-quantum-dot (DQD) micromaser generates photons through single-electron tunneling events. Charge noise couples to the DQD energy levels, resulting in a maser linewidth that is 100 times larger than the Schawlow-Townes prediction. We demonstrate linewidth narrowing by more than a factor of 10 using injection locking. The injection locking range is measured as a function of input power and is shown to be in excellent agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models.en_US
dc.language.isoen_USen_US
dc.relation.ispartofPHYSICAL REVIEW Aen_US
dc.rightsFinal published version. Article is made available in OAR by the publisher's permission or policy.en_US
dc.titleInjection locking of a semiconductor double-quantum-dot micromaseren_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1103/PhysRevA.92.053802-
dc.date.eissued2015-11-02en_US
dc.identifier.eissn2469-9934-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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