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Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon

Author(s): Mi, X; Cady, JV; Zajac, DM; Stehlik, J; Edge, LF; et al

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Abstract: We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate g(c)/2 pi = 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon. Published by AIP Publishing.
Publication Date: 23-Jan-2017
Electronic Publication Date: 23-Jan-2017
Citation: Mi, X, Cady, JV, Zajac, DM, Stehlik, J, Edge, LF, Petta, JR. (2017). Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon. APPLIED PHYSICS LETTERS, 110 (10.1063/1.4974536
DOI: doi:10.1063/1.4974536
ISSN: 0003-6951
EISSN: 1077-3118
Type of Material: Journal Article
Journal/Proceeding Title: APPLIED PHYSICS LETTERS
Version: Final published version. Article is made available in OAR by the publisher's permission or policy.

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