Skip to main content

Low-carrier-concentration crystals of the topological insulator Bi2Te2Se

Author(s): Jia, Shuang; Ji, Huiwen; Climent-Pascual, E; Fuccillo, MK; Charles, ME; et al

To refer to this page use:
Abstract: We report the characterization of Bi2Te2Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal-growth techniques. X-ray-diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing. The crystals displaying high resistivity (>1 Omega cm) and low carrier concentration (similar to 5 x 10(16)/cm(3)) at 4 K were found in the central region of the long Bridgman-Stockbarger crystal, which we attribute to very small differences in defect density along the length of the crystal rod. Analysis of the temperature-dependent resistivities and Hall coefficients reveals the possible underlying origins of the donors and acceptors in this phase.
Publication Date: 15-Dec-2011
Electronic Publication Date: 15-Dec-2011
Citation: Jia, Shuang, Ji, Huiwen, Climent-Pascual, E, Fuccillo, MK, Charles, ME, Xiong, Jun, Ong, NP, Cava, RJ. (2011). Low-carrier-concentration crystals of the topological insulator Bi2Te2Se. PHYSICAL REVIEW B, 84 (10.1103/PhysRevB.84.235206
DOI: doi:10.1103/PhysRevB.84.235206
ISSN: 1098-0121
Type of Material: Journal Article
Journal/Proceeding Title: PHYSICAL REVIEW B
Version: Final published version. This is an open access article.

Items in OAR@Princeton are protected by copyright, with all rights reserved, unless otherwise indicated.