Skip to main content

Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

Author(s): Kushwaha, SK; Pletikosic, I; Liang, T; Gyenis, A; Lapidus, SH; et al

To refer to this page use:
Abstract: A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1 Sb 0.9 Te 2 S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.
Publication Date: 27-Apr-2016
Electronic Publication Date: 27-Apr-2016
Citation: Kushwaha, SK, Pletikosic, I, Liang, T, Gyenis, A, Lapidus, SH, Tian, Y, Zhao, H, Burch, KS, Lin, JJ, Wang, WD, Ji, HW, Fedorov, AV, Yazdani, A, Ong, NP, Valla, T, Cava, RJ. (2016). Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties. Nature Communications, 7 (10.1038/ncomms11456
DOI: doi:10.1038/ncomms11456
ISSN: 2041-1723
Type of Material: Journal Article
Journal/Proceeding Title: Nature Communications
Version: Final published version. This is an open access article.

Items in OAR@Princeton are protected by copyright, with all rights reserved, unless otherwise indicated.