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Delocalization Transition of a Disordered Axion Insulator

Author(s): Song, Zhi-Da; Lian, Biao; Queiroz, Raquel; Ilan, Roni; Bernevig, B Andrei; et al

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Abstract: The axion insulator is a higher-order topological insulator protected by inversion symmetry. We show that under quenched disorder respecting inversion symmetry on average, the topology of the axion insulator stays robust, and an intermediate metallic phase in which states are delocalized is unavoidable at the transition from an axion insulator to a trivial insulator. We derive this conclusion from general arguments, from classical percolation theory, and from the numerical study of a 3D quantum network model simulating a disordered axion insulator through a layer construction. We find the localization length critical exponent near the delocalization transition to be ν = 1.42 ± 0.12. We further show that this delocalization transition is stable even to weak breaking of the average inversion symmetry, up to a critical strength. We also quantitatively map our quantum network model to an effective Hamiltonian and we find its low energy k·p expansion.
Publication Date: 29-Jun-2021
Electronic Publication Date: 29-Jun-2021
Citation: Song, Zhi-Da, Lian, Biao, Queiroz, Raquel, Ilan, Roni, Bernevig, B Andrei, Stern, Ady. (Delocalization Transition of a Disordered Axion Insulator. Physical Review Letters, 127 (1), 10.1103/physrevlett.127.016602
DOI: doi:10.1103/physrevlett.127.016602
ISSN: 0031-9007
EISSN: 1079-7114
Language: en
Type of Material: Journal Article
Journal/Proceeding Title: Physical Review Letters
Version: Author's manuscript



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